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1

Performance and Reliability Features of Advanced Nonvolatile Memories Based on Discrete Traps (Silicon Nanocrystals, SONOS)

DeSalvo, B., Gerardi, C., vanSchaijk, R., Lombardo, S.A., Corso, D., Plantamura, C., Serafino, S., Ammendola, G., vanDuuren, M., Goarin, P., W. Y. Mei,, vanderJeugd, K., Baron, T., Gely, M., Mur, P.,

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2004

Language:

english

File:

PDF, 672 KB

english, 2004

2

Ultra-thin oxides grown on silicon (1 0 0) by rapid thermal oxidation for CMOS and advanced devices

P Mur, M.N Semeria, M Olivier, A.M Papon, Ch Leroux, G Reimbold, P Gentile, N Magnea, T Baron, R Clerc, G Ghibaudo

Journal:

Applied Surface Science

Year:

2001

Language:

english

File:

PDF, 605 KB

english, 2001

3

Growth by Low Pressure Chemical Vapor Deposition of Silicon Quantum Dots on Insulator for Nanoelectronics Devices

Baron, T., Martin, F., Mur, P., Wyon, C., Dupuy, M., Busseret, C., Souifi, A., Guillot, G.

Journal:

MRS Proceedings

Year:

1999

Language:

english

File:

PDF, 2.22 MB

english, 1999

4

Metallic nano-crystals for flash memories

J. Dufourcq, P. Mur, M.J. Gordon, S. Minoret, R. Coppard, T. Baron

Journal:

Materials Science and Engineering: C

Year:

2007

Language:

english

File:

PDF, 1.14 MB

english, 2007

5

Growth and characterization of LPCVD Si quantum dots on insulators

T Baron, F Mazen, J.M Hartmann, P Mur, R.A Puglisi, S Lombardo, G Ammendola, C Gerardi

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 503 KB

english, 2004

6

Silicon quantum dot nucleation on Si3N4, SiO2 and SiOxNy substrates for nanoelectronic devices

T. Baron, F. Martin, P. Mur, C. Wyon, M. Dupuy

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 353 KB

english, 2000

7

Low pressure chemical vapor deposition growth of silicon quantum dots on insulator for nanoelectronics devices

T. Baron, F. Martin, P. Mur, C. Wyon, M. Dupuy, C. Busseret, A. Souifi, G. Guillot

Journal:

Applied Surface Science

Year:

2000

Language:

english

File:

PDF, 1.01 MB

english, 2000

8

Application of a parallel photochemical air quality model to the Campania region (southern Italy)

G Barone, P D'Ambra, D di Serafino, G Giunta, A Murli, A Riccio

Journal:

Environmental Modelling & Software

Year:

2000

Language:

english

File:

PDF, 2.04 MB

english, 2000

9

Study of self-limiting oxidation of silicon nanoclusters by atomistic simulations

Dalla Torre, J., Bocquet, J.-L., Limoge, Y., Crocombette, J.-P., Adam, E., Martin, G., Baron, T., Rivallin, P., Mur, P.

Journal:

Journal of Applied Physics

Year:

2002

Language:

english

File:

PDF, 1.41 MB

english, 2002

10

Nucleation control of CVD growth silicon nanocrystals for quantum devices

T. Baron, F. Mazen, C. Busseret, A. Souifi, P. Mur, F. Fournel, M.N. Séméria, H. Moriceau, B. Aspard, P. Gentile, N. Magnea

Journal:

Microelectronic Engineering

Year:

2002

Language:

english

File:

PDF, 1019 KB

english, 2002

11

Single-electron charging effect in individual Si nanocrystals

T. Baron, P. Gentile, N. Magnea, P. Mur

Journal:

Applied Physics Letters

Year:

2001

Language:

english

File:

PDF, 405 KB

english, 2001

12

High density platinum nanocrystals for non-volatile memory applications

J. Dufourcq, S. Bodnar, G. Gay, D. Lafond, P. Mur, G. Molas, J. P. Nieto, L. Vandroux, L. Jodin, F. Gustavo, T. Baron

Year:

2008

Language:

english

File:

PDF, 850 KB

english, 2008

13

[IEEE IEEE International Electron Devices Meeting 2003 - Washington, DC, USA (8-10 Dec. 2003)] IEEE International Electron Devices Meeting 2003 - How far will silicon nanocrystals push the scaling limits of NVMs technologies?

De Salvo, B., Gerardi, C., Lombardo, S., Baron, T., Perniola, L., Mariolle, D., Mur, P., Toffoli, A., Gely, M., Semeria, M.N., Deleonibus, S., Ammendola, G., Ancarani, V., Melanotte, M., Bez, R., Bald

Year:

2003

Language:

english

File:

PDF, 334 KB

english, 2003

14

Improved size dispersion of silicon nanocrystals grown in a batch LPCVD reactor

Wan, Y. M., van der Jeugd, K., Baron, T., De Salvo, B., Mur, P.

Journal:

MRS Proceedings

Year:

2004

Language:

english

File:

PDF, 2.65 MB

english, 2004

15

Influence of the Chemical Properties of the Substrate on Silicon Quantum Dot Nucleation

Mazen, F., Baron, T., Brémond, G., Buffet, N., Rochat, N., Mur, P., Séméria, M. N.

Journal:

Journal of The Electrochemical Society

Year:

2003

Language:

english

File:

PDF, 255 KB

english, 2003

16

PNAM: parallel software for air quality simulations in the Naples area

D’Ambra, Pasqua, Barone, Guido, diSerafino, Daniela, Giunta, Giulio, Murli, Almerico, Riccio, Angelo

Journal:

Environmental Management and Health

Year:

1999

Language:

english

File:

PDF, 267 KB

english, 1999

17

Single electron charging effect in individual Si nanocrystals.

Gentile, P., Baron, T., Magnea, N., Mur, P., Martin, F., Séméria, M.N.

Journal:

MRS Proceedings

Year:

2000

Language:

english

File:

PDF, 363 KB

english, 2000

18

Targeted apoptosis of myofibroblasts with the BH3 mimetic ABT-263 reverses established fibrosis

Lagares, David, Santos, Alba, Grasberger, Paula E., Liu, Fei, Probst, Clemens K., Rahimi, Rod A., Sakai, Norihiko, Kuehl, Tobias, Ryan, Jeremy, Bhola, Patrick, Montero, Joan, Kapoor, Mohit, Baron, Mur

Journal:

Science Translational Medicine

Year:

2017

Language:

english

File:

PDF, 1.53 MB

english, 2017